Abstract

An original method is developed to determine the carbon content in industrial samples (thin silicon wafers double-side polished) through IR spectrometry. This method permits to remove interference fringes in the infrared spectra by using the properties of Brewster incidence.

Carbon dioxide absorption spectroscopy with a mid-infrared silicon photonic waveguide

Floria Ottonello-Briano, Carlos Errando-Herranz, Henrik Rödjegård, Hans Martin, Hans Sohlström, and Kristinn B. Gylfason
Opt. Lett. 45(1) 109-112 (2020)

Sub-sampling low coherence scanning interferometry and its application: refractive index measurements of a silicon wafer

Ki-Nam Joo
Appl. Opt. 52(36) 8644-8649 (2013)

Reflectometry-based wavelength scanning interferometry for thickness measurements of very thin wafers

Young-Sik Ghim, Amit Suratkar, and Angela Davies
Opt. Express 18(7) 6522-6529 (2010)

Surface profile measurement and parameter analysis of silicon wafers in the upright state

Ying Yang, Sen Han, Ling-Hua Zhang, Yu-Hang Shen, and Chun-Feng Xu
Appl. Opt. 63(10) 2587-2593 (2024)

Differential Laser absorption spectrometry for global profiling of tropospheric carbon dioxide: selection of optimum sounding frequencies for high-precision measurements

Robert T. Menzies and David M. Tratt
Appl. Opt. 42(33) 6569-6577 (2003)