Abstract

Infrared absorption spectroscopy proves to be a useful tool in the evaluation of plasma chemical conversions of etch gas mixtures during plasma etching for microelectronics. The partial pressures of the various perfluorinated gas components are obtained from infrared spectra with sufficient accuracy and may yield information about the actual state of the system. Methods of spectra recording and partial pressure computation are discussed. To demonstrate the applicability of the method, the conversions of CF₄ + O₂, and C₂F₄ in a glow discharge are investigated.

Infrared emission spectroscopy of glow discharge formed in low pressure atmospheric gases

H. Sakai, P. Hansen, M. Esplin, R. Johansson, M. Peltola, and J. Strong
Appl. Opt. 21(2) 228-235 (1982)

Modelling of removal characteristics and surface morphology formation in capacitively coupled atmospheric pressure plasma processing of fused silica optics

Duo Li, Na Li, Xing Su, Kan Liu, Peng Ji, and Bo Wang
Opt. Mater. Express 9(4) 1893-1906 (2019)

Fluorine incorporation into porous silica by gas phase doping with C₂F₆ in N₂

Frank Froehlich, Claudia Aichele, Stephan Grimm, and Kay Schuster
Opt. Mater. Express 3(11) 1839-1854 (2013)

Infrared spectroscopy of tropospheric trace gases: combined analysis of horizontal and vertical column abundances

Ralf Sussmann and Klaus Schäfer
Appl. Opt. 36(3) 735-741 (1997)

Quantitative analysis of Fuller’s earth using laser-induced breakdown spectroscopy and inductively coupled plasma/optical emission spectroscopy

I. Rehan, M. Z. Khan, K. Rehan, S. Sultana, M. U. Rehman, R. Muhammad, M. Ikram, and H. Anwar
Appl. Opt. 58(16) 4227-4233 (2019)