Abstract

A low-noise detection system using an InGaAs PIN photodiode for near-infrared spectroscopic measurement has been developed. The InGaAs PIN photodiode is more suitable than a Ge PIN photodiode for detecting low-level light in terms of dark current and quantum efficiency. The detection system consists of an InGaAs PIN photodiode with a charge integrating amplifier (InGaAs-CIA) operated at 77 K. A minimum detectable power of 10⁻¹⁶ W was achieved at a wavelength of 1.28 μm.

Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise

Makoto Akiba and Yoshikazu Kanai
Opt. Lett. 37(12) 2235-2237 (2012)

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Zhen Sheng, Liu Liu, Joost Brouckaert, Sailing He, and Dries Van Thourhout
Opt. Express 18(2) 1756-1761 (2010)

Spectral reflectance and responsivity of Ge- and InGaAs-photodiodes in the near-infrared: measurement and model

M. López, H. Hofer, K. D. Stock, J. C. Bermúdez, A. Schirmacher, F. Schneck, and S. Kück
Appl. Opt. 46(29) 7337-7344 (2007)

Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes

Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, and Baile Chen
Opt. Express 26(26) 35034-35045 (2018)

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]

Léopold Virot, Laurent Vivien, Jean-Marc Fédéli, Yann Bogumilowicz, Jean-Michel Hartmann, Frédéric Bœuf, Paul Crozat, Delphine Marris-Morini, and Eric Cassan
Photon. Res. 1(3) 140-147 (2013)