Abstract

Density of dislocations in the near-surface layer was investigated in X-cut LiNbO₃ depending on thermal annealing in the temperature range of 400°C–600°C. A dynamic model of randomly distributed dislocations has been developed for LiNbO₃ by using X-ray diffraction. The experimental results showed that the dislocation density of the near-surface layer reached the minimum at the thermal annealing temperature of 500°C, with the analysis being performed when wet selective etching and X-ray diffraction methods were used. We concluded that homogenization annealing is an effective technique to improve the quality of photonic circuits based on LiNbO₃. The results obtained are important for optical waveguides, LiNbO₃-on-insulator-based micro-photonic devices, electro-optical modulators, sensors, etc.

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