Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 5,
  • Issue 10,
  • pp. 588-590
  • (2007)

Optimization of gallium nitride-based laser diode through transverse modes analysis

Not Accessible

Your library or personal account may give you access

Abstract

We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.

© 2007 Chinese Optics Letters

PDF Article
More Like This
Analytical models of electron leakage currents in gallium nitride-based laser diodes and light-emitting diodes

Shukun Li, Guo Yu, Rui Lang, Menglai Lei, Huanqing Chen, Muhammad Saddique Akbar Khan, Linghai Meng, Hua Zong, Shengxiang Jiang, Peijun Wen, Wei Yang, and Xiaodong Hu
Opt. Express 30(3) 3973-3988 (2022)

Suppression of substrate mode in GaN-based green laser diodes

Lingrong Jiang, Jianping Liu, Liqun Zhang, Bocang Qiu, Aiqin Tian, Lei Hu, Deyao Li, Siyi Huang, Wei Zhou, Masao Ikeda, and Hui Yang
Opt. Express 28(10) 15497-15504 (2020)

Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes

Anisa Myzaferi, Asad J. Mughal, Daniel A. Cohen, Robert M. Farrell, Shuji Nakamura, James S. Speck, and Steven P. DenBaars
Opt. Express 26(10) 12490-12498 (2018)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved