Abstract
High-strained InGaAs/InGaAsP multiple quantum wells (MQWs) distributed feedback (DFB)
lasers, fabricated using metal organic chemical vapor deposition, are presented at 1.82 μm with a
high side-mode-suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB
mode wavelength are 0.01 nm/mA and 0.13 nm/°C, respectively. A characteristic temperature of 51 K
is also confirmed. The DFB laser demonstrates good performance and can be applied to H<sub>2</sub>O
concentration sensing.
© 2013 Chinese Optics Letters
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