Abstract
A systematic series of silicon (Si) wafer with microstructured anti-reflection film is
prepared by femtosecond laser pulse. The dependence of the morphology and optical properties of the
microstructured Si on the experimental parameters is thoroughly investigated. With the laser pulse
duration of 40 fs, central wavelength of 800 nm, repetition rate of 250 kHz, laser pulse power of
300 mW, 250 μm/s scanning speed, and 2 μm of displacement between the parallel scans in the
air, the quasiordered arrays of grain microstructures on the Si wafer up to 800-nm tall and 800-nm
diameter at the bottom offered near-unity transmission in the mid-infrared wavelength. An
anti-reflection film of approximately 3 × 3 (mm) is developed on the (211) Si substrate with
the optimized parameters, Moreover, up to 30% improvement of the response performance is
demonstrated.
© 2013 Chinese Optics Letters
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