Abstract

We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser (EML) based on the ion-implantation induced quantum well intermixing (QWI) technique. To well-preserve material quality in the laser region, thermal-oxide SiO₂ is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator’s extinction ratio (ER) caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation bandwidth of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.

© 2015 Chinese Laser Press

1.3-µm identical active electro-absorption modulated laser with quantum well intermixed passive waveguide

Seungchul Lee, Namje Kim, Miran Park, and O-Kyun Kwon
Opt. Express 32(3) 3278-3289 (2024)

Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

Naoki Sekine, Kei Sumita, Kasidit Toprasertpong, Shinichi Takagi, and Mitsuru Takenaka
Opt. Express 30(13) 23318-23329 (2022)

Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices

Romain Beal, Vincent Aimez, and Jan J. Dubowski
Opt. Express 23(2) 1073-1080 (2015)

Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing

Siddharth R. Jain, Matthew N. Sysak, Geza Kurczveil, and John E. Bowers
Opt. Express 19(14) 13692-13699 (2011)

Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells

Jijun Feng, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama, and Hiroshi Ishikawa
Opt. Express 20(26) B279-B287 (2012)