Abstract

The authors would like to apologize for omitting “Acknowledgement” in the paper on Chinese Optics Letters vol. 14, no. 4, page 042302. The “Acknowledgement” for the paper is as follows:This work was supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education) (No. JG1401), the National Natural Science Foundation of China (No. 61306113), and the Major Research Plan of the National Natural Science Foundation of China (No. 91433112).

© 2016 Chinese Laser Press

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

Huining Wang, Ziwu Ji, Shuang Qu, Gang Wang, Yongzhi Jiang, Baoli Liu, Xiangang Xu, and Hirofumi Mino
Opt. Express 20(4) 3932-3940 (2012)

Influence of low-temperature GaN-Cap layer thickness on the InGaN/GaN multiple quantum well structure and its luminescence

Yuntao Zhao, Guanghui Li, Shuai Zhang, Feng Liang, Mei Zhou, Degang Zhao, and Desheng Jiang
Opt. Mater. Express 11(5) 1411-1419 (2021)

Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells

W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du
Opt. Express 23(12) 15935-15943 (2015)

Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy

Ryota Ishii, Yuji Koyama, Mitsuru Funato, and Yoichi Kawakami
Opt. Express 29(15) 22847-22854 (2021)

Photoluminescence of InGaN-based red multiple quantum wells

Xin Hou, Shaosheng Fan, Daisuke Iida, Yang Mei, Baoping Zhang, and Kazuhiro Ohkawa
Opt. Express 29(19) 30237-30243 (2021)