Abstract

The population trapping effect of the F3₄ level is an important factor limiting the power scaling of the 2.3 µm thulium (Tm) laser on the H3₄→H3₅ transition. In this Letter, we demonstrate a novel scheme of ground state absorption (GSA) (H3₆→H3₄) and excited state absorption (ESA) (F3₄→H3₄) dual-wavelength pumped 2.3 µm Tm lasers. Introducing an ESA pumping process can accurately excite the Tm³⁺ ions accumulated in the F3₄ level to the H3₄ level, constructing a double populating mechanism for the upper laser level H3₄. A proof-of-principle experimental demonstration of the GSA (785 nm) and ESA (1470 nm) dual-wavelength pumped 2.3 µm Tm:LiYF₄ (Tm:YLF) laser was realized. A maximum continuous-wave output power of 1.84 W at 2308 nm was achieved under 785 and 1470 nm dual-wavelength pumping, increased by 60% compared with the case of 785 nm single-wavelength pumping under the same resonator condition. Our work provides an efficient way to achieve higher output power from 2.3 µm Tm-doped lasers on the H3₄→H3₅ transition.

© 2021 Chinese Laser Press

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