Abstract

We first study the effect of cavity modes propagating in the lateral dimension on high-power semiconductor lasers with a large stripe width. A sidewall microstructure was fabricated to prevent optical feedback of lateral resonant modes. Theoretically, we demonstrate the existence of lateral resonant modes in the Fabry–Perot cavity with a large stripe width. Experimentally, we design the corresponding devices and compare them with conventional broad-area diode lasers. About a 15% reduction in threshold current and a 27% increase in maximum electro-optical conversion efficiency are achieved. The amplified spontaneous emission spectrum is narrowed, which proves that lateral microstructures suppress optical feedback of lateral resonant modes. Under a large continuous-wave operation, the maximum output power of laser device is 43.03 W, about 1 W higher than that of the standard broad-area laser at 48 A.

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