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Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 5,
  • Issue 10,
  • pp. 588-590
  • (2007)

Optimization of gallium nitride-based laser diode through transverse modes analysis

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Abstract

We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.

© 2007 Chinese Optics Letters

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