Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 7,
  • Issue 10,
  • pp. 918-920
  • (2009)

Light extraction of GaN LEDs with 2-D photonic crystal structure

Not Accessible

Your library or personal account may give you access

Abstract

Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structure on the top surface of GaN-based light emitting diode (LED). PC patterns are transferred to 460-nm-thick transparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7, which means that the light extraction efficiency is enhanced outstandingly.

© 2009 Chinese Optics Letters

PDF Article
More Like This
Conformally direct imprinted inorganic surface corrugation for light extraction enhancement of light emitting diodes

Sarah Kim, Sang-Mook Kim, Hyeong-Ho Park, Dae-Geun Choi, Jae-Woo Jung, Jun Ho Jeong, and Jong-Ryul Jeong
Opt. Express 20(S5) A713-A721 (2012)

Enhanced light extraction efficiency of GaN-based green micro-LED modulating by a thickness-tunable SiO2 passivation structure

Xing Yan, Xun Hu, Rui Zhou, Na Gao, Yuchao Yao, Yujie Gao, and Junyong Kang
Opt. Express 31(24) 39717-39726 (2023)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved