Abstract
ZnS thin films are deposited on porous silicon (PS) substrates with different porosities by pulsed laser deposition (PLD). The photoluminescence (PL) spectra of the samples are measured at room temperature. The results show that the PL intensity of PS after deposition of ZnS increases and is associated with a blue shift. With the increase of PS porosity, a green emission at about 550 nm is observed in the PL spectra of ZnS/PS systems, which may be ascribed to the defect-center luminescence of ZnS films. Junction current-voltage (I-V) characteristics were studied. The rectifying behavior of I-V characteristics indicates the formation of ZnS/PS heterojunctions, and the forward current is seen to increase when the PS porosity is increased.
© 2009 Chinese Optics Letters
PDF Article
More Like This
Growth and optoelectronic application of CsPbBr3 thin films deposited by pulsed-laser deposition
Yu Huang, Lichun Zhang, Jianbu Wang, Baoyu Zhang, Lianjie Xin, Songren Niu, Yuan Zhao, Man Xu, Xinbo Chu, Dengying Zhang, Chong Qu, and FengZhou Zhao
Opt. Lett. 44(8) 1908-1911 (2019)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription