Abstract

Ta2O5/SiO2 dielectric mirrors deposited by ion beam sputtering (IBS) are studied. The multi-shot laser-induced damage threshold (LIDT) and its dependence on the number of shots are investigated, after which we find that the multi-shot LIDT is lower than that of single-shot. The accumulation effects of defects play an important role in the multi-shot laser damage. A simple model, which includes the conduction band electron production vsa multiphoton and impact ionizations, is presented to explain the experimental phenomena.

© 2011 Chinese Optics Letters

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