Abstract
This study observed the performance of an InAs/GaSb type-II superlattice photodiode with a p-i-n structure for mid-wavelength infrared detection. The 10 ML InAs/10 ML GaSb type-II superlattice photodiode was grown using molecular beam epitaxy. The cutoff wavelength of the manufactured photodiode with Si3N4 passivation on the mesa sidewall was determined to be approximately 5.4 and 5.5 µm at 30 K and 77 K, respectively. At a bias of −50 mV, the dark-current density for the Si3N4-passivated diode was measured to be 7.9 × 10−5 and 1.1 × 10−4 A/cm2 at 77 K and 100 K, respectively. The differential resistance-area product RdA at a bias of −0.15 V was 1481 and 1056 Ω cm2 at 77 K and 100 K, respectively. The measured detectivity from a blackbody source at 800 K was calculated to be 1.1 × 1010 cm Hz1/2/W at zero bias and 77 K.
© 2021 Optical Society of Korea
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