Abstract
This paper describes the construction of a phase shifter with low loss and small volume. To construct it, we use the two graphene layers that are separated by a hexagonal boron nitride (hBN) and embedded in a silicon waveguide. The refractive index of the waveguide is adjusted by applying a bias voltage to the graphene sheet to create an optical phase shift. This waveguide is a compact device that only has a radius of 5 μm. It has a phase shift of 6π. In addition, the extinction ratio (ER) is 11.6 dB and the insertion loss (IL) is 0.031 dB. Due to its unique characteristics, this device has great potential in silicon on-chip optical interconnection and all-optical multiple-input multiple-output processing.
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