Abstract
A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at −2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 1010 cmHz1/2W−1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.
© 2022 Optical Society of Korea
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