Abstract

Numerical values of the Auger coefficient and the free carrier absorption (FCA) coefficient are extracted by applying deep neural networks (DNNs) to the L-I characteristics of 850 nm GaAs/AlGaAs laser diodes. Two elemental DNNs are used to extract each coefficient sequentially. The fidelity of the extracted values is established through meticulous correlation of L-I characteristics bridging the realms of simulations and measurements. The methodology presented in this paper offers a way to accurately extract the Auger and FCA coefficients, which were traditionally treated as fitting parameters. It is anticipated that this approach will be applicable to other types of opto-electronic devices as well.

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