Abstract
Fluorinated graphene field effect transistors (FETs) with an ionic liquid
(IL) top-gate are demonstrated. Fluorinated graphene functionalized with different
fluorine concentrations were prepared. Highly fluorinated graphene FETs controlled
by ionic liquid gating (ILG) exhibited higher on/off ratios than pristine
(non-fluorinated) graphene FET, while conventional back gating (BG) configuration
resulted in lower on/off ratios. ILG can induce high charge density in fluorinated
graphene with localized states because of extremely high electric field effect
of an electric double layer between IL and fluorinated graphene. Thus, a higher
on/off ratio was obtained by the combination of graphene fluorination and
ILG.
© 2014 IEEE
PDF Article
More Like This
Flexible terahertz modulator based on coplanar-gate graphene field-effect transistor structure
Jingbo Liu, Pingjian Li, Yuanfu Chen, Xinbo Song, Qi Mao, Yang Wu, Fei Qi, Binjie Zheng, Jiarui He, Hyunsoo Yang, Qiye Wen, and Wanli Zhang
Opt. Lett. 41(4) 816-819 (2016)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription