Abstract
We investigated the carrier generation mechanism in the stacked
film of fluorinated silicon nitride
$({SiN}_{x}{:F})$
on InGaZnO
$({IGZO/SiN}_{x}{:F})$
through post-annealing and compared its mechanism to that
of the
${SiO}_{x}$
stack
$({IGZO/SiO}_{x})$
. The resistivity
$(\rho)$
and
carrier concentration
$(n)$
of two types of the stacked films through post-annealing
were measured by the Hall measurement. The as-deposited
${n}^{+}$
a-IGZO film with the
${SiN}_{x}\{:F}$
stack showed
$\rho$
of
3.3
$\times{
10} ^{-3}~\Omega\cdot{cm}$
and
$n$
of 1.0
$\times { 10} ^{20}~{cm}^{-3}$
, which was approximately one order of magnitude higher
than that with the
${SiO}_{x}$
stack. X-ray photoelectron spectroscopy
(XPS) analyses indicated that
${\rm V}_{\rm O}$
defect was the main
source of free electrons in both of the as-deposited
${IGZO/SiO}_{x}$
and
${IGZO/SiN}_{x}{:F}$
stacks. After post-annealing at 300
$^{\circ}{C}$
, the carrier generation mechanism in the
${IGZO/SiN}_{x}{:F}$
stack changed from defects related to
${\rm V}_{\rm O}$
to the fluorine doping. XPS depth profile analyses also
revealed that fluorine in IGZO film passivated
${\rm V}_{\rm O}$
and substituted metal–oxygen to thermally stable
metal–fluorine (M-F) bonds simultaneously. As a consequence,
the thermal stability of
$n$
in the
${IGZO/SiN}_{x}{:F}$
stack drastically improved, as compared with that in the
${IGZO/SiO}_{x}$
stack. Therefore, we consider that this fluorine doping
method in IGZO is suitable for achieving self-aligned thin-film transistors to improve operation
speed of system-in-display.
© 2015 IEEE
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