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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 9,
  • Issue 12,
  • pp. 985-988
  • (2013)

Channel Length Dependent Bias-Stability of Self-Aligned Coplanar a-IGZO TFTs

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We report channel length $L$ ( $L$ ranging from 2 to 40 $ \mu{{m}}$ ) dependence of the electrical stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs employ a coplanar structure with a ${{SiN}}_{x}$ interlayer used to dope the source/drain regions. After application of positive gate bias stress (PBS), short-channel devices ( $L = 2~ \mu {{m}}$ ) exhibit smaller threshold voltage shifts ( $\Delta {\rm V} _{\rm th}$ ) compared to longer-channel devices ( $L \ge {4}~ \mu{{m}}$ ). It is proposed that carrier diffusion takes place from the high carrier concentration regions under the ${{SiN}}_{x}$ interlayer to the intrinsic channel region, thereby shifting the Fermi level closer to the conduction band. Higher Fermi levels mean less defect states available for carrier trapping – hence the small $\Delta {\rm V} _{\rm th}$ in short devices under PBS.

© 2013 IEEE

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