Abstract
We report the post-annealing effect on the performance of amorphous
indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with self-aligned
coplanar structure. The a-IZGO layer was passivated with
${{SiO}}_{2}$
or
${{SiN}}_{x}$
by plasma enhanced
chemical vapor deposition (PECVD). The field-effect mobility of a-IGZO TFT
with
${{SiN}}_{x}$
is almost unchanged by extending the post-annealing time at 250
$^{\circ}{{C}}$
,
but that of
${{SiO}}_{2}$
passivated TFT significantly degrades by increasing annealing time.
It is found that the resistivity of the a-IGZO under
${{SiN}}_{x}$
is low enough and thus
can be good conduction path, leading to the high performance TFT. It is also
found that the interface trap density
$(N_{it})$
between a-IGZO TFT with
${{SiN}}_{x}$
passivation decreases from
${{3.0}}\times
{{10}}^{11}$
to
$1.54\times
10^{11}\ {{cm}}^{-2}\ {{eV}}^{-1}$
, and the stability
of the a-IGZO TFT with
${{SiN}}_{x}$
passivation is significantly improved by long post-annealing.
© 2013 IEEE
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