Abstract
The transparent and conductive zinc oxide co-doped by aluminum and ytterbium
(AYZO) is demonstrated. The transmittance of AYZO films in visible region
only changes by less than 1% due to the stability of the suppressed oxygen
vacancies. With the illuminating wavelength red-shifting up to 532 nm, the
45 nm-thick AYZO film slightly enhances its transmittance to 90% with different
annealing durations. The resistivity of AYZO films reaches a minimum of 3.2
$\times {{10}} ^{-4} ~\Omega
\cdot{cm}$
at 450
$^{\circ}{C}$
-annealing for 15 min because
the annealing process enhances the activation of ionized Yb and Al donor states
in AYZO films. With the residual oxygen vacancies rigorously controlled to
minimize the transmittance variation during annealing, the
${Yb}^{3+}$
ions added into the AYZO
films contribute to the conductivity after activation but help to stabilize.
Nevertheless, the annealing process for 15 min or longer duration contributes
to a decreased resistivity due to the reduction of oxygen vacancy by crystalline
regrowth of the AYZO films. The resistivity of AYZO films is still dominated
by the oxygen-vacancy instead of the ionized Al and Yb states even after activation.
With the co-doping of Yb ions, the AYZO film effectively decreases its resistivity
to be a competitive candidate to substitute the ITO for a highly transparent
and conductive electrode.
© 2014 IEEE
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