Abstract
High-performance amorphous indium-gallium–zinc oxide thin-film
transistors (IGZO TFTs) were demonstrated at
${{360}}\ ^{\circ}{{C}}$
with
the IGZO channel and aluminium oxide (AlOx) gate dielectric stack that was
deposited by ozone
$({{O}}_{3})$
-assisted atmospheric pressure chemical vapor deposition (AP-CVD)
using an ultrasonic atomized solution mist. The AlOx gate dielectric with
a breakdown electric field of over 8 MV/cm and dielectric constant of 7.0
was obtained. In addition, the introduction of
${{O}}_{3}$
oxidant during the IGZO
deposition decreases the carbon and hydrogen contamination in the film. Field
effect mobility and the sub-threshold swing of the IGZO TFT with AP-deposited
IGZO/AlOx stack were significantly improved to
${{7.5}}~{{cm}}^{2} / {{V}}{{s}}$
and 0.38 V/dec, respectively, by the
${{O}}_{3}$
oxidant introduced in
the IGZO and AlOx depositions. The
${{O}}_{3}$
oxidant is very effective in improving the electrical properties
of solution-processed oxide TFTs.
© 2013 IEEE
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