Abstract
This study numerically investigates the effect of using
a new electron blocking layer (EBL) for blue InGaN light-emitting diodes (LEDs)
to improve hole injection efficiency and electron confinement. Simulation
results suggest that the carrier transportation behavior of the EBL can be
appropriately modified by adept control of the graded AlGaN layer. Furthermore,
when compared with the conventional LED structure, the redesigned LED with
graded AlGaN layer shows a slight improvement in forward voltage
${\rm V}_{\rm f}$
and
a significant enhancement in light output power. The redesigned LED can achieve
an exceptional increment of 106.6% in light output power at 100 mA when compared
with conventional LED. The observed improvement in the photoelectric performance
of blue LEDs is primarily due to the reduced polarization effect at the last-barrier/EBL
interface, as a result of the graded Al composition in EBL.
© 2014 IEEE
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