Abstract
The authors experimentally studied GaN-based light-emitting diodes (LEDs)
with both an staircase electron injector (SEI) structure and a conventional
electron blocking layer (EBL). With the EBL, it was found that we could enhance
LED output power, reduce forward voltage, and mitigate efficiency droop by
inserting the SEI structure. These improvements could all be attributed to
the effective cooling of the injected hot electrons. However, it was also
found that some of the injected electrons could still leak into the p-GaN
layer in the LED with SEI structure but without the EBL.
© 2013 IEEE
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