Abstract
In this study, three different partial radiant
flux testing methods including the large-area silicon (Si) photodiode
method, the assembling Si photodiodes box method, and the integrating
sphere method were used to measure the optical power of UV-LED die.
The optical simulations and the experiments have been performed to
study the influence of the varying LED die position and tilt angle.
The optical simulations based on the real measurement geometries were
used to confirm the gathering hitting optical power on Si photodiode
through different methods. The simulation and measurement results
in this study can be used as the future reference of different partial
LED flux testing methods to measure the large number of UV-LED dies.
© 2015 IEEE
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