Abstract
A method to extract the density of subgap states in amorphous
InGaZnO thin-film transistors is proposed. The nonuniform characteristic
of surface potential along the channel has been taken into account.
The variation of interface state density with the applied bias voltage
is derived from the capacitance–voltage characteristic. In addition,
by combining the obtained density of interface states with the subthreshold
swing, the energy distribution of bulk traps is determined. Results
fit well with the experimental data.
© 2014 IEEE
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