Abstract

In this paper, we successfully fabricated Ti-doped ZnO (TZO) thin film transistors (TFTs). Al-doped ZnO (AZO) film was adopted as source/drain (S/D) electrode, forming an AZO/TZO hetero-junction S/D contact. Meanwhile, TZO TFTs with ITO S/D electrode were also fabricated for comparison. Both AZO and ITO films were fabricated using radio frequency (RF) magnetron sputtering at room temperature (RT). Compared with ITO, device with AZO S/D electrodes exhibits higher ${I} _{\rm on} /{I} _{\rm off}$ ratio of 1.9 $\times {{10}} ^{9}$ , lower ${I} _{\rm off}$ of 570 fA, and comparable saturation mobility ( $\mu_{\rm sat}$ ) of 108.6 ${{cm}}^{2} \cdot {{V}} ^{-1} \cdot {{S}} ^{-1}$ . What’s more, as channel length decreases, TFTs with AZO S/D electrodes still show good performances.

© 2015 IEEE

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