Abstract
InGaN light-emitting diodes (LEDs) with the alternating quantum
barriers (AQB) of AlGaN and InGaN is proposed for LED applications.
With this design, simulation results show that the carrier concentration
and transport in the multi-quantum well (MQW) active region are improved
and accordingly, the radiative recombination rate is enhanced and
the electron leakage is suppressed, due to the appropriate band engineering.
Thus, the proposed structure shows an efficient improvement in the
internal quantum efficiency (IQE) and efficiency droop, compared to
the original structures with GaN barriers, or AlGaN barriers, or InGaN
barriers. Our studies suggest that relatively simple engineering of
the MQW region may still have notable positive effects on LED performance.
© 2015 IEEE
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