Abstract
The dynamic response of hydrogenated amorphous silicon (a-Si:H)
thin-film transistor (TFT) and amorphous In-Ga-Zn-O (a-IGZO) TFT are
compared. We study the storage capacitor
$(C_{\rm st})$
charging characteristics
by applying gate and data voltage waveforms corresponding to ultra-high
definition (UHD) active-matrix liquid crystal displays (AM-LCDs).
We show that the charging behavior of the a-Si:H TFT is insufficient
for UHD AM-LCDs and that the a-IGZO TFT is capable of supporting at
least 8 K
$\times$
4 K display resolution at 480 Hz. The impact of
$C_{\rm st}$
and
gate voltage falling edge
$(t_{\rm FE})$
on feedthrough voltage
$(\Delta V_{\rm P})$
is investigated. Because of higher mobility of the a-IGZO
TFT, it is possible to reduce
$\Delta V_{\rm P}$
by mitigating channel
charge redistribution with non-abrupt
$t_{\rm FE}$
. The a-IGZO TFT shows
no drawbacks in terms of
$\Delta V_{\rm P}$
when compared to
the a-Si:H TFT. In addition, a larger
$C_{\rm st}$
can be used in combination
with the a-IGZO TFT to reduce
$\Delta V_{\rm P}$
with minimal impact
on its charging behavior. Gate overdrive operation is also evaluated
for the a-IGZO TFT, which may improve charging characteristics with
no adverse effects on
$\Delta
V_{\rm P}$
. Our results show that the a-IGZO TFT is
a suitable technology for UHD high-frame rate AM-LCDs.
© 2015 IEEE
PDF Article
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