Abstract

This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrO $_{x}$ layer. The ZrO $_{x}$ thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm $^{2}$ at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm $^{2}$ at 50 Hz. The InZnO TFT incorporating the UV-treated ZrO $_{x}$ dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of ${{10}}^{7}$ , a field-effect mobility of 14.7 cm $^{2}/{{V}}{\cdot}{{s}}$ , a subthreshold swing voltage of 100 mV/decade and a threshold voltage shift under bias stress, for 2 hours less than 0.1 V. All these performances are obtained at a low operation voltage of 2 V and make it suitable for use as a switching transistor in low-power electronics applications.

© 2014 IEEE

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