Abstract
The frequency and time dependence of capacitance of
dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)-based
metal-insulator-semiconductor (MIS) capacitors were studied. The frequency spectra show
a long and gradual slope over many orders of magnitude in frequency, and the time
evolution in the subthreshold region exhibits a logarithmic dependence. These two
phenomena are analyzed from a unified point of view on the basis of charge trapping
models that were originally developed for Si-based MIS capacitors. The charge trapping
model with a Gaussian-distributed surface potential in DNTT successfully reproduces both
the frequency and time dependences with the same parameter set.
© 2015 IEEE
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