Abstract
We report a solution-processed a top gate indium-gallium-zinc
oxide thin film transistors (IGZO TFTs) with high-
$k$
zirconium
oxide (ZrOx) dielectric. Both the dielectrics and electrodes were
fabricated by spin coating or screen printing. The ZrOx exhibits an
amorphous structure and smooth enough to be used as a gate insulator
for TFT. The TFT with maximum process temperature of 300
$^{\circ}$
C had a saturation mobility of 0.2 cm
$^{2}/{{V}}\cdot{{s}}$
, an on/off ratio of
${{10}}^{3}$
, a threshold voltage of 0.3 V,
and the subthreshold swing is 0.34 V/decade.
© 2015 IEEE
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