Abstract

InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with the step stage MQW structure have been investigated numerically. LEDs exhibit enhanced light output power and reduced turn-on voltage with the step stage MQW. Simulated results show that the improvement is mainly due to the modified band bending which is related to the polarization effect. Although the good crystalline quality can reduce the nonradiative recombination, it seems that the impact is small and non-dominant in the performance improvement.

© 2015 IEEE

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