Abstract

This paper presents low-power rail-to-rail output inverter and logic gates with only n-channel transistors. The proposed circuits with two capacitive-coupled stages and feedback are capable of reducing the direct path current substantially, essentially for antenna powered and mobile applications, while ensuring the full swing output. The presented simulation and measurement results are based on modeling and experimental characterization of low-temperature hydrogenated back-channel etched amorphous silicon thin-film transistors (a-Si:H TFT) and indium–gallium–zinc–oxide (IGZO) TFTs. The insensitivity of the design to the variation of the on-voltage of IGZO TFT technology is demonstrated.

© 2016 IEEE

Ultra-high-image-density large-size organic light-emitting devices based on In-Ga-Zn-O thin-film transistors with a coplanar structure

Hong Jae Shin and Tae Whan Kim
Opt. Express 26(13) 16805-16812 (2018)

Gate-controlled Sb₂S₃ thin film photodetectors for logic switches

Hui Deng, Yubin Kang, Yi Jia, Zekun Chen, Weihuang Wang, Yong Xia, Yunfeng Lai, and Shuying Cheng
Opt. Lett. 48(20) 5265-5268 (2023)

Optical and electrical properties of In₂MgO₄ thin film for transistors

Jian Ke Yao, Fan Ye, and Ping Fan
Opt. Mater. Express 8(11) 3438-3446 (2018)

Compact and low-power optical logic NOT gate based on photonic crystal waveguides without optical amplifiers and nonlinear materials

Chih Jung Wu, Chung Ping Liu, and Zhengbiao Ouyang
Appl. Opt. 51(5) 680-685 (2012)

Low power, high speed, all-optical logic gates based on optical bistability in graphene-containing compact microdisk resonators

Peyman Keshtkar, Mehdi Miri, and Navid Yasrebi
Appl. Opt. 60(24) 7234-7242 (2021)