Abstract
We report for the first time on the impact of a printed indium
tin oxide (ITO) layer inserted between a printed silver conductor
and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact
scheme for full print integration. Introducing the ITO interlayer,
the contact resistance is reduced by two orders of magnitude. Nanoparticle
thin-film transistors (TFTs) in this Ag/ITO contact configuration
show improved saturation mobility of 0.53
${{cm}}^{2}\cdot {{V}} ^{-1} \cdot{{s}}
^{-1}$
with respect to 0.08
${{cm}}^{2} \cdot{{V}}
^{-1} \cdot{{s}} ^{-1}$
without ITO interlayer.
The contact improvement can be attributed to either an increased charge
carrier concentration or a reduction of band offsets at the ZnO/electrode
interface.
© 2015 OAPA
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