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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 12,
  • Issue 3,
  • pp. 214-218
  • (2016)

Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme

Open Access Open Access

Abstract

We report for the first time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-film transistors (TFTs) in this Ag/ITO contact configuration show improved saturation mobility of 0.53 ${{cm}}^{2}\cdot {{V}} ^{-1} \cdot{{s}} ^{-1}$ with respect to 0.08 ${{cm}}^{2} \cdot{{V}} ^{-1} \cdot{{s}} ^{-1}$ without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.

© 2015 OAPA

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