Abstract
This paper reported the IGZO and IZO thin-film
transistor (TFT) with titanium-oxide semiconductor as channel capping
layer. After the
${{TiO}}_{x}$
Gettering process, the oxygen
vacancies in IGZO channel were successfully modified to maximize the
carrier concentration and device mobility. The superior transfer characteristics
included a low sub-threshold swing of 79 mV/decade, a very high mobility
of
${{68}}~{{cm}}^{2}/{{V}}{\cdot}{{s}}$
, and good on/off-current ratio of
${{5.61}}\times {{10}}^{6}$
. However, the IZO channel with nano-crystallized grains
and without Ga atom doping showed unfavorable transistor characteristics.
In addition to apparently degraded transfer properties, the spontaneously
oxidized
${{TiO}}_{x}$
capping layer also lead to an increase of channel parasitic
resistance that limits the output driving current. Therefore, we believe
that the existence of Ga–O bonds among IGZO channel would be
helpful to stabilize oxygen diffusion behavior and electric structure
during Gettering process.
© 2015 IEEE
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