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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 12,
  • Issue 3,
  • pp. 228-231
  • (2016)

Development of Back-Channel Etched In-W-Zn-O Thin-Film Transistors

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Abstract

Back-channel etched (BCE) thin-film transistors (TFTs) are developed using a novel oxide semiconducting material, In-W-Zn-O (IWZO). A bi-layer structure for the IWZO oxide semiconductor layer is proposed to realize both high resistance to back-channel etching damage and high TFT mobility. The developed IWZO BCE-TFTs exhibit high mobilities of up to 20.2 ${{cm}}^{2}/{{V}}\cdot{{s}}$ .

© 2015 IEEE

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