Abstract
This study examined the electrical properties of a-IGZO thin-film
transistors (TFTs) with a gate insulator of
${{SiO}}_{2}$
, in which a more TFT-industry-compatible sputtering technique
was used for all processing steps. Instead of plasma enhanced chemical
vapor deposition, a room-temperature sputtered
${{SiO}}_{2}$
gate insulator was used, which is more preferable for the
simple and low cost process for oxide TFTs. The dielectric strength
of the sputtered
${{SiO}}_{2}$
film with an oxygen ratio of 6.25%
was 6.3 MV/cm, which is sufficient for a gate insulator. The a-IGZO
TFTs with the sputtered
${{SiO}}_{2}$
gate insulators
showed the optimal device parameters after post-annealing at
$400^{\circ}{{C}}$
for 1 hour in air: saturation field-effect mobility of
${{3.80}}~{{cm}}^{2}/{{V}}\cdot{\rm
s}$
,
$V_{\rm th}$
of
$-{{2.84}}~{{V}}$
, on/off
ratio of
${{1.43}}\times
{{10}}^{5}$
, and
$S.S$
of 0.88 V/dec.
© 2015 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy