Abstract
We report design, fabrication, and characterization of high-voltage
LEDs (HVLEDs) using photoresist-filled-trench technique. Narrow trenches
(1
$\mu$
m wide) were etched to isolate the constituent LED cells
of a HVLED chip and then passivated by refilling thermal curable photoresist.
With a planarized HVLED surface, only a thin metal layer was needed
for inter-cell connection. The narrow trench design ensured uniform
light emission and allowed for negligible connection resistance. The
optical power of a HVLED with 33 cells reached 1.76 W at 100 mA. The
results suggested that HVLED is a viable design option for high-voltage
and low current drive applications, with large and uniform light emission
areas.
© 2015 IEEE
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