Abstract

Dual-color InGaN/GaN pyramidal micro light-emitting diode ( $\mu$ -LED) was directly grown on SiO $_{{{2}}}$ masked Si substrate via selective area growth technology. An electrically driven dual-color $\mu$ -LED with typical rectifying behavior and a turn-on voltage of about 3 V was demonstrated. Two emission peaks locating at 440 and 490 nm were observed by micro-photoluminescence. Using catholuminescence measurement, it was found that the blue emission originated from the apex of micro pyramid top, and green emission was mainly from the lower part of side facets. By controlling the injection current, electroluminescence emission color of the $\mu$ -LED can be tuned continuously from green to blue range.

© 2015 IEEE

Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a β-Ga₂O₃ substrate

Yiwei Duo, Yu Yin, Rui He, Renfeng Chen, Yijian Song, Hao Long, Junxi Wang, and Tongbo Wei
Opt. Lett. 49(2) 254-257 (2024)

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO₂

Chu-Young Cho, Jin-Bock Lee, Sang-Jun Lee, Sang-Heon Han, Tae-Young Park, Je Won Kim, Yong Chun Kim, and Seong-Ju Park
Opt. Express 18(2) 1462-1468 (2010)

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates

Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P.C. Chen, Ming-Jui Wu, Wei-Chih Lai, and Jinn-Kong Sheu
Opt. Express 21(S5) A864-A871 (2013)

InGaN/GaN nanowires grown on SiO₂ and light emitting diodes with low turn on voltages

Youngseo Park, Shafat Jahangir, Yongjun Park, Pallab Bhattacharya, and Junseok Heo
Opt. Express 23(11) A650-A656 (2015)

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Guofeng Yang, Peng Chen, Shumei Gao, Guoqing Chen, Rong Zhang, and Youdou Zheng
Photon. Res. 4(1) 17-20 (2016)