Abstract
This paper presents a study concerning the role of channel length scaling on IGZO
TFT technology benchmark parameters, which are fabricated at temperatures not exceeding
$180\, ^{\circ}$
C. The parameters under investigation are unity current-gain cutoff
frequency, intrinsic voltage-gain, and on-resistance of the bottom-gate IGZO TFTs. As
the channel length varies from 160 to 3
$\mu$
m, the measured cutoff frequency increases from 163
${\rm kHz}$
to 111.5
${\rm MHz}$
, which is a superior value compared to the other competing
low-temperature thin-film technologies, such as organic TFTs. On the other hand, for the
same transistor dimensions, the measured intrinsic voltage-gain is changing from 165 to
5.3 and the on-resistance is decreasing from 1135.6 to 26.1 k
$\Omega$
. TFTs with smaller channel length (3
$\mu$
m) have shown a highly negative turn-on voltage and hump in the
subthreshold region, which can be attributed to short channel effects. The results
obtained here, together with their interpretation based on device physics, provide
crucial information for accurate IC design, enabling an adequate selection of device
dimensions to maximize the performance of different circuit building blocks assuring the
multifunctionality demanded by system-on-panel concepts.
© 2016 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy