Abstract

In this paper, we proposed and numerically investigated InGaN/GaN light-emitting diodes (LEDs) with a last barrier of GaN-InGaN. Through simulations, we investigated their voltage–current curves, performance curves, carrier concentrations, radiative recombination rates, and energy band diagrams. The simulation results show that the InGaN/GaN LEDs with the GaN-InGaN last barrier have lower turn-on voltage, higher output light power, and better efficiency droop than LEDs with the conventional GaN last barrier. This improvement comes from the appropriately modified energy band diagram, which aids in electron confinement and hole injection, as well as in uniformly distributing these carriers in the quantum wells.

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