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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 4,
  • Issue 3,
  • pp. 300-303
  • (2008)

Active Matrix OTFT Display With Anodized Gate Dielectric

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Abstract

A complete process for an active-matrix (AM) organic thin-film transistor (OTFT) polymer dispersed liquid crystal (PDLC) display is presented. Evaporated pentacene is used as semiconductor. The display comprises 64$\times$64 pixel, each with a pixel pitch of $({\hbox{312.5}} \times {\hbox{312.5}})\mu{\hbox{m}}^2$. The AM display is fabricated with standard photolithographic processes. Since all process temperatures are below 180$^{\circ}$C the processes for the AM backplane can be easily transferred to plastic substrates like PEN or PET. Due to the thin anodically oxidized ${\hbox{Al}}_2$${\hbox{O}}_3$ gate dielectric with a thickness of 60 nm and $\varepsilon_{\rm r}=9$, driving voltages between 10 and 12 V are sufficient. To protect the pentacene against the PDLC, it is encapsulated with sputtered ${\hbox{Ta}}_2 {\hbox{O}}_5$ layer. After the passivation a field effect mobility of 0.2 ${\hbox{cm}}^{2}/{\hbox{V}}\cdot{\hbox{s}}$ is obtained for the OTFTs.

© 2008 IEEE

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