Abstract
A new process enabling the transfer of a single-crystal silicon film to a
glass substrate has been developed allowing for the creation of fully
crystalline thin-film silicon-on-glass (SiOG) transistors. The dominant 2-D
effect in SiOG transistors results from fringing electric field lines
emanating through the glass substrate between the source, drain, and
thin-film channel regions. The fringing field leads to a shift in the
flatband or threshold voltage in a similar manner to drain-induced barrier
lowering. The fringing field effect can lead to an 11% shift in flatband for
devices with channel length of 4 $\mu{\rm m}$ and a nominal flatband of $-$1 V. A compact model for the fringing field in these devices has
been developed using conformal mapping techniques that capture the
dependence on both channel length and the relative size of the source and
drain electrodes. The model accurately predicts the influence of the
fringing field on subthreshold drain current for SiOG PFETs operating in
accumulation. The model is validated against the 2-D device simulator
Silvaco Atlas.
© 2010 IEEE
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