Abstract
The photo effect of gap-gate type hydrogenated amorphous
silicon thin-film transistor (a-Si:H TFT) has been studied to be employed
as light sensors owing to its outstanding photosensitivity. It can be operated
in on region to provide a higher current level as the sensing signal. However,
the gap–gate a-Si:H TFT suffers from some problems such as the photo-current
degradation resulted from illuminations and the disturbance of the backlight
source when it is used as the sensor in display panel. A new method is proposed
to overcome the above issues, which gives a feasible way for this kind of
TFT to be used in TFT LCD panel. In this paper, the operation of the sensing
method is fully described.
© 2011 IEEE
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