Abstract
Hydrogenated amorphous silicon (a-Si:H) thin-film
transistors (TFTs) are widely used as controlling devices for
picture pixels in liquid crystal displays. In addition to flat
panel display applications, a significant research effort
focuses on the extension of this technology to circuitry on
flexible substrates to build flexible sensor systems. This study
investigates the effect of anneal time on the performance of the
a-Si:H TFTs on Polyethylene naphthalate (PEN). Off-current is
reduced by two orders of magnitude for 48-hours annealed TFT,
and the sub-threshold slope become steeper with longer
annealing. For positive gate-bias-stress, Δ<i>V<sub>t</sub></i>
values are positive and exhibit a power-law time dependence
(PLTD). The 48-hour annealed TFTs, however, display a turnaround
phenomenon (TP) at longer stress times. For negative
gate-bias-stress, TFTs annealed for > 24 hours
possess a smaller positive Δ<i>V<sub>t</sub></i>. They do not follow
a PLTD and the TP is observed at longer stress times. The
observed Δ<i>V<sub>t</sub></i> is explained in terms of the shift in
the electron and hole transfer characteristics.
© 2010 IEEE
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