Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Display Technology
  • Vol. 8,
  • Issue 1,
  • pp. 18-22
  • (2012)

Reduction of Short Channel Effects and Hot Carrier Induced Instability in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs

Not Accessible

Your library or personal account may give you access


Electrical characteristics of fully self-aligned gate overlapped lightly doped drain (FSA-GOLDD) polysilicon thin-film transistors (TFTs), fabricated with a spacer technology and providing submicron (0.35 μm) LDD regions, have been analyzed. Device characteristics show negligible series resistance of the LDD region while effective drain field relief has been demonstrated by a reduced kink effect and off-current, if compared to conventional self-aligned (SA) devices. Short channel effects are also mitigated by the LDD region, while substantial reduction in the hot-carrier induced instability is found, when compared with conventional SA devices. Optimum doping dose of the LDD region has been identified to be 9 × 10<sup>12</sup> cm<sup>2</sup>.

© 2011 IEEE

PDF Article
More Like This
Effects of source/drain electrode contact length on the photoresponsive properties of organic field-effect transistors

Sunan Xu, Hongquan Xia, Fangzhi Guo, Yuhuan Yang, Yingquan Peng, Wenli Lv, Xiao Luo, Ying Wang, Zouyu Yang, and Lei Sun
Opt. Mater. Express 8(4) 901-908 (2018)

Near-infrared femtosecond laser crystallized poly-Si thin film transistors

Yi-Chao Wang, Jia-Min Shieh, Hsiao-Wen Zan, and Ci-Ling Pan
Opt. Express 15(11) 6982-6987 (2007)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.